W9725G6KB-25 DRAM ic Chip DDR2 SDRAM 256Mbit 16Mx16 1.8V 84-Pin WBGA

W9725G6KB-25 DRAM ic Chip DDR2 SDRAM 256Mbit 16Mx16 1.8V 84-Pin WBGA

DRAM Chip DDR2 SDRAM 256Mbit 16Mx16 1.8V 84-Pin WBGA

1. GENERAL DESCRIPTION

The W9725G6KB is a 256M bits DDR2 SDRAM, organized as 4,194,304 words  4 banks  16 bits. This device achieves high speed transfer rates up to 1066Mb/sec/pin (DDR2-1066) for general applications. W9725G6KB is sorted into the following speed grades: -18, -25, 25I and -3. The -18 grade parts is compliant to the DDR2-1066 (7-7-7) specification. The -25 and 25I grade parts are compliant to the DDR2-800 (5-5-5) or DDR2-800 (6-6-6) specification (the 25I industrial grade parts which is guaranteed to support -40°C ≤ TCASE ≤ 95°C). The -3 grade parts is compliant to the DDR2- 667 (5-5-5) specification. All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CLK rising and CLK falling). All I/Os are synchronized with a single ended DQS or differential DQS- DQS pair in a source synchronous fashion.

2. FEATURES  Power Supply: VDD, VDDQ = 1.8 V ± 0.1V  Double Data Rate architecture: two data transfers per clock cycle  CAS Latency: 3, 4, 5, 6 and 7  Burst Length: 4 and 8  Bi-directional, differential data strobes (DQS and DQS ) are transmitted / received with data  Edge-aligned with Read data and center-aligned with Write data  DLL aligns DQ and DQS transitions with clock  Differential clock inputs (CLK and CLK )  Data masks (DM) for write data  Commands entered on each positive CLK edge, data and data mask are referenced to both edges of DQS  Posted CAS programmable additive latency supported to make command and data bus efficiency  Read Latency = Additive Latency plus CAS Latency (RL = AL + CL)  Off-Chip-Driver impedance adjustment (OCD) and On-Die-Termination (ODT) for better signal quality  Auto-precharge operation for read and write bursts  Auto Refresh and Self Refresh modes  Precharged Power Down and Active Power Down  Write Data Mask  Write Latency = Read Latency - 1 (WL = RL - 1)  Interface: SSTL_18  Packaged in WBGA 84 Ball (8x12.5 mm2 ), using Lead free materials with RoHS compliant.

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W9725G6KB-25 DRAM ic Chip DDR2 SDRAM 256Mbit 16Mx16 1.8V 84-Pin WBGA Images